- reverse-biased heterojunction
- оберненозміщений перехід
English-Ukrainian dictionary of microelectronics. 2013.
reverse-biased heterojunction
Смотреть что такое "reverse-biased heterojunction" в других словарях:
reverse-biased heterojunction — užvertoji įvairialytė sandūra statusas T sritis radioelektronika atitikmenys: angl. reverse biased heterojunction vok. in Sperrichtung vorgespannter Heteroübergang, m rus. обратносмещённый гетеропереход, m pranc. hétérojonction polarisée en… … Radioelektronikos terminų žodynas
hétérojonction polarisée en inverse — užvertoji įvairialytė sandūra statusas T sritis radioelektronika atitikmenys: angl. reverse biased heterojunction vok. in Sperrichtung vorgespannter Heteroübergang, m rus. обратносмещённый гетеропереход, m pranc. hétérojonction polarisée en… … Radioelektronikos terminų žodynas
in Sperrichtung vorgespannter Heteroübergang — užvertoji įvairialytė sandūra statusas T sritis radioelektronika atitikmenys: angl. reverse biased heterojunction vok. in Sperrichtung vorgespannter Heteroübergang, m rus. обратносмещённый гетеропереход, m pranc. hétérojonction polarisée en… … Radioelektronikos terminų žodynas
užvertoji įvairialytė sandūra — statusas T sritis radioelektronika atitikmenys: angl. reverse biased heterojunction vok. in Sperrichtung vorgespannter Heteroübergang, m rus. обратносмещённый гетеропереход, m pranc. hétérojonction polarisée en inverse, f … Radioelektronikos terminų žodynas
обратносмещённый гетеропереход — užvertoji įvairialytė sandūra statusas T sritis radioelektronika atitikmenys: angl. reverse biased heterojunction vok. in Sperrichtung vorgespannter Heteroübergang, m rus. обратносмещённый гетеропереход, m pranc. hétérojonction polarisée en… … Radioelektronikos terminų žodynas
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… … Wikipedia
